MRAM
MRAM (Magnetoresistive Random Access Memory) is a type of non-volatile memory that uses magnetic charges to store data. MRAM is based on the phenomenon of magnetoresistance, which is the change in electrical resistance of a material in response to an applied magnetic field. MRAM has several advantages over other types of memory, including high speed, low power consumption, and high endurance. MRAM is also resistant to radiation and can operate in harsh environments, making it suitable for use in space and astronautical engineering applications.
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